FinFETs and Methods for Forming the Same

摘要

Methods for forming a semiconductor device and a FinFET device are disclosed. A method comprises forming a dummy gate electrode layer over a substrate, the dummy gate electrode layer having a first height, forming a first etch stop layer on the dummy gate electrode layer, forming a first hard mask layer on the first etch stop layer, and patterning the first hard mask layer. The method further comprises patterning the first etch stop layer to align with the patterned first hard mask layer, and patterning the gate electrode layer to form a dummy gate electrode, the dummy gate electrode aligning with the patterned first etch stop layer, wherein after the patterning the gate electrode layer the first hard mask layer has a vertical sidewall of a second height, the second height being less than the first height, and the first hard mask layer having a rounded top surface.

主权项

1. A method comprising:
forming a first gate electrode layer over a substrate, the first gate electrode layer having a first height; forming a first hard mask layer over the first gate electrode layer; and etching the first hard mask layer and the first gate electrode layer to form a first gate electrode, the first gate electrode aligning with the etched first hard mask layer, wherein after the etching the first gate electrode layer, the first hard mask layer has a vertical sidewall of a second height, the second height being in a range from about 25% to about 50% of the first height.