METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT

摘要

A method of manufacturing a semiconductor device with an embedded layer, by anisotropically etching a substrate adjacent to an already formed gate structure. A dummy layer is deposited in the previously etched region, and a second spacer is formed next to the first spacer. The dummy layer is removed, and a second anisotropic etch is performed. A semiconductor substrate is then epitaxially grown in the etched out region to form the embedded layer.

主权项

1. A method of forming a semiconductor structure, the method comprising:
performing a first etch, wherein the first etch comprises anisotropically etching a region of a semiconductor substrate adjacent to a gate to form a recessed region in the semiconductor substrate, wherein the gate comprises a gate stack, and a pair of first spacers sandwiching the gate stack; forming a dummy layer in the recessed region of the semiconductor substrate; forming a pair of second spacers adjacent to the pair of first spacer; removing the dummy layer; performing a second etch, wherein the second etch comprises anisotropically etching the semiconductor substrate such that a recessed source/drain region extends underneath the dielectric spacers; and epitaxially growing a source/drain region in the recessed source/drain region of the semiconductor substrate.