| 发明名称 |
SEMICONDUCTOR ARRANGEMENTS AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
Semiconductor arrangements and methods for manufacturing the same. The arrangement may include: a substrate; a back gate formed on the substrate; at least one pair of nanowires disposed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective nanowires. |
| 申请公布号 |
US2015340438(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201314397463 |
申请日期 |
2013.03.11 |
| 申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
ZHU Huilong |
| 分类号 |
H01L29/06;H01L29/66;H01L29/775;H01L29/78;H01L29/786;H01L29/161;H01L29/16;H01L29/423;H01L29/49 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor arrangement, comprising:
a substrate; a back gate formed on the substrate; at least one pair of nanowires disposed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective nanowires. |
| 地址 |
Beijing CN |
