| 发明名称 |
METHOD AND STRUCTURES FOR HEAT DISSIPATING INTERPOSERS |
| 摘要 |
An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer. |
| 申请公布号 |
US2015340310(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514815282 |
申请日期 |
2015.07.31 |
| 申请人 |
Invensas Corporation |
发明人 |
Uzoh Cyprian Emeka;Monadgemi Pezhman;Caskey Terrence;Ayatollahi Fatima Lina;Haba Belgacem;Woychik Charles G.;Newman Michael |
| 分类号 |
H01L23/498;H01L23/367;H01L23/373 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An interconnect element, comprising:
a semiconductor or insulating material layer having a first thickness and defining a first surface; a thermally conductive layer having a second thickness of at least 10 microns and defining a second surface of the interconnect element; a plurality of conductive elements extending from the first surface of the interconnect element to the second surface of the interconnect element; and a dielectric coating between at least a portion of each conductive element and the thermally conductive layer. |
| 地址 |
San Jose CA US |
