| 发明名称 |
METHOD FOR REDUCING DEFECTS IN POLYSILICON LAYERS |
| 摘要 |
Present example embodiments relate generally to semiconductor devices and methods of fabricating a semiconductor device. The method comprises providing a substrate, forming an insulating layer over the substrate, and forming a conductive structure over the insulating layer. The conductive structure is formed by forming a first conductive layer, performing a degassing preparation process over a surface of the first conductive layer to substantially prevent a degassing of the first conductive layer from reaching a second conductive layer, and forming the second conductive layer over the first conductive layer. |
| 申请公布号 |
US2015340236(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201414284162 |
申请日期 |
2014.05.21 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Liao Jeng Hwa;Shieh Jung-Yu;Yang Ling Wuu |
| 分类号 |
H01L21/28;H01L21/02;H01L21/324;H01L27/115;H01L21/447 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate; forming an insulating layer over the substrate; and forming a conductive structure over the insulating layer by:
forming a first conductive layer;performing a degassing preparation process over a surface of the first conductive layer to substantially prevent a degassing of the first conductive layer from reaching a second conductive layer; andforming the second conductive layer over the first conductive layer. |
| 地址 |
Hsinchu TW |
