发明名称 ION IMPLANTATION APPARATUS
摘要 An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.
申请公布号 US2015340197(A1) 申请公布日期 2015.11.26
申请号 US201514721752 申请日期 2015.05.26
申请人 Sumitomo Heavy Industries Ion Technology Co., Ltd. 发明人 Matsushita Hiroshi;Kabasawa Mitsuaki;Amano Yoshitaka;Yagita Takanori
分类号 H01J37/147;H01J37/08;H01J37/317 主分类号 H01J37/147
代理机构 代理人
主权项 1. An ion implantation apparatus including a scanning unit, the scanning unit comprising: a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction perpendicular to the reference trajectory, and a downstream electrode device disposed downstream of the scanning electrode device and provided with openings through which the ion beam scanned in the horizontal direction passes, wherein the scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween, and the downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing a downstream end of the scanning electrode.
地址 Tokyo JP
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