发明名称 CONDITIONING OF GROOVING IN POLISHING PADS
摘要 Among other things, a method comprises polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad. The surface of the polishing pad defines one or more grooves separated by one or more partition regions. The one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves. The method also comprises removing material below an initial bottom of the one or more grooves such that a distance between an outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.
申请公布号 US2015336236(A1) 申请公布日期 2015.11.26
申请号 US201414285545 申请日期 2014.05.22
申请人 Applied Materials, Inc. 发明人 Chen Hung;Bajaj Rajeev;Brown Brian J.;Lum Robert T.;Redeker Fred C.
分类号 B24B53/017;H01L21/306;B26F3/00;H01L21/268;B24B37/26;B23K26/36 主分类号 B24B53/017
代理机构 代理人
主权项 1. A method comprising: polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad, wherein the surface of the polishing pad defines one or more grooves separated by one or more partition regions, and the one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves, and wherein at least some materials in the initial surface of the one or more partition regions wear away during the polishing such that a distance between an outer surface of the one or more partition regions and the initial bottom of the one or more grooves decreases over time; and removing material below the initial bottom of the one or more grooves such that a distance between the outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.
地址 Santa Clara CA US