| 发明名称 |
METHOD FOR ANNEALING A THIN FILM PHOTOVOLTAIC CELL DEVICE |
| 摘要 |
A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C. |
| 申请公布号 |
US2015340544(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201414286597 |
申请日期 |
2014.05.23 |
| 申请人 |
TEL Solar AG |
发明人 |
Hänni Simon;Ding Laura |
| 分类号 |
H01L31/18;H01L31/0368;H01L31/077 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for annealing a thin film solar cell device, comprising:
after depositing a photovoltaic cell stack including a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode, vacuum annealing said photovoltaic cell stack in a non-plasma, vacuum environment by elevating a temperature of said photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C. |
| 地址 |
Trubbach CH |
