发明名称 |
METHOD OF MANUFACTURING SOLAR CELL AND SOLAR CELL |
摘要 |
A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region. |
申请公布号 |
US2015340531(A1) |
申请公布日期 |
2015.11.26 |
申请号 |
US201514718161 |
申请日期 |
2015.05.21 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
HAYASHI Naofumi;MISHIMA Takahiro;MASUKO Keiichiro |
分类号 |
H01L31/075;H01L31/18 |
主分类号 |
H01L31/075 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a solar cell in which a region having a first conductivity type and a region having a second conductivity type are formed on a principal surface of a semiconductor substrate having the first conductivity type, comprising:
forming a first semiconductor layer having the first conductivity type on the principal surface of the semiconductor substrate; forming an insulation layer on the first semiconductor layer; forming a protective layer on the insulation layer; etching the first semiconductor layer, the insulation layer and the protective layer in a region other than the region having the first conductivity type in such a way that the first semiconductor layer, the insulation layer and the protective layer remain in the region having the first conductivity type; partially etching a side surface of the insulation layer, and thereby forming a recessed region in which the side surface of the insulation layer is recessed inward from a side surface of the first semiconductor layer and a side surface of the protective layer; forming a second semiconductor layer having the second conductivity type on the semiconductor substrate, on the protective layer, and in the recessed region above the first semiconductor layer; and etching the protective layer and the second semiconductor layer on the insulation layer. |
地址 |
Osaka JP |