MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING/REPRODUCING APPARATUS, AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To improve MR change rate of a CCP-CPP element.SOLUTION: A magnetoresistive effect element includes: a magnetization fixed layer in which magnetization is substantially fixed in one direction; a magnetization free layer which is formed opposite the magnetization fixed layer and in which magnetization changes relative to an external magnetic field; a spacer layer which is arranged between the magnetization fixed layer and the magnetization free layer, and includes a current constriction layer having an insulation layer and a conductor causing current to flow through the insulation layer in a layer direction; and a functional layer which contains at least one element selected from Si, Mg, and B and having lower oxide generation free energy than Fe, in at least one of the magnetization free layer and a boundary surface between the magnetization free layer and the spacer layer.