THIN FILM TRANSISTOR, AMORPHOUS SILICON FLAT DETECTION SUBSTRATE AND MANUFACTURING METHOD

摘要

A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.

主权项

1. A manufacturing method of a thin film transistor comprising:
disposing an amorphous metal oxide semiconductor film on a substrate or on a gate electrode insulating layer on a gate electrode; and depositing an insulating substance containing hydrogen ions not less than a preset value in parts of the amorphous metal oxide semiconductor film serving as a source electrode and a drain electrode.