Group III-V Device Including a Shield Plate

摘要

There are disclosed herein various implementations of a group III-V device including a shield plate. Such a group III-V device includes a substrate, a transition body situated over the substrate, a device channel layer situated over the transition body, and a device barrier layer situated over the device channel layer and producing a device two-dimensional electron gas (2-DEG). The group III-V device also includes a drain electrode coupled to the device barrier layer, and a shield plate, which may be coupled to the drain electrode or may be a floating shield plate. The shield plate is configured to substantially shield the device 2-DEG from charge centers situated over the device barrier layer.

主权项

1. A group III-V device comprising:
a substrate; a transition body situated over said substrate; a device channel layer situated over said transition body, and a device barrier layer situated over said device channel layer thereby producing a device two-dimensional electron gas (2DEG); a drain electrode of said group III-V device coupled to said device barrier layer; a shield plate coupled to said drain electrode, said shield plate configured to substantially shield said device 2DEG from charge centers situated over said device barrier layer.