SEMICONDUCTOR DEVICES INCLUDING PROTECTION PATTERNS AND METHODS OF FORMING THE SAME

摘要

Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.

主权项

1. A semiconductor device, comprising:
a substrate comprising a keep out zone (KOZ); a plurality of interconnections disposed outside of the KOZ on the substrate; a through silicon via (TSV) in the KOZ, the TSV passing through the substrate; and a protection pattern in the KOZ, the protection pattern being electrically insulated from the TSV and comprising a conductive material different from the TSV, wherein a lower end of the protection pattern is at a level higher than a lower end of the TSV.