发明名称 |
MANUFACTURING METHOD OF FUNCTIONAL DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional element capable of suppressing a defect such as a defective shape in the functional element.SOLUTION: A manufacturing method of a functional element includes: a seed layer formation step of forming a seed layer 20 on a substrate 10; a mask layer formation step of forming a mask layer 40 having opening portions 41 on the seed layer 20; an oxide film formation step of forming oxide films 50 obtained by applying oxidation treatment of the mask layer 40 with a film thickness of surface roughness of the mask layer 40 within a range of Ra to 100 nm at least at a part of an exposed surface of the mask layer 40; a seed layer etching step of performing etching of the seed layer 20 subsequent to formation of the oxide film 50; and a substrate etching step of performing etching of the substrate 10 subsequent to the etching of the seed layer 20. |
申请公布号 |
JP2015213208(A) |
申请公布日期 |
2015.11.26 |
申请号 |
JP20140094452 |
申请日期 |
2014.05.01 |
申请人 |
SEIKO EPSON CORP |
发明人 |
NAKAGAWA NAOHIRO |
分类号 |
H03H3/02;B81C1/00;G01C19/5628;H01L21/308;H03H9/19;H03H9/215 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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