| 发明名称 |
Magnetic Tunnel Junction Device |
| 摘要 |
A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer. |
| 申请公布号 |
US2015340596(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514820820 |
申请日期 |
2015.08.07 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Wei-Hang;Hsu Chern-Yow;Liu Shih-Chang;Tsai Chia-Shiung |
| 分类号 |
H01L43/02 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic tunnel junction (MTJ) device comprising:
a substrate; a bottom electrode disposed over the substrate; a MTJ stack disposed over the bottom electrode; and a top electrode disposed over the MTJ stack, wherein the top electrode has a T-shape, the T-shape comprising a pillar and a cross member, the pillar being tapered. |
| 地址 |
Hsin-Chu TW |
