| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME |
| 摘要 |
Semiconductor devices and methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a fin disposed on a substrate. The fin may include an insulating layer pattern disposed in a top surface of the fin. The semiconductor devices may also include a wire pattern disposed on the insulating layer pattern to be separated from the insulating layer pattern and a gate electrode surrounding the wire pattern. |
| 申请公布号 |
US2015340490(A1) |
申请公布日期 |
2015.11.26 |
| 申请号 |
US201514658306 |
申请日期 |
2015.03.16 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
An Tae-Hyun;Nam Gab-Jin |
| 分类号 |
H01L29/78;H01L29/423;H01L27/088 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a fin disposed on a substrate, the fin including an insulating layer pattern disposed in a top surface of the fin; a wire pattern disposed on the insulating layer pattern to be separated from the insulating layer pattern; and a gate electrode surrounding the wire pattern. |
| 地址 |
Suwon-si KR |
