| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve substrate processing productivity by reducing the cost of substrate processing which uses plasma.SOLUTION: A substrate processing device comprises: a processing chamber which processes a substrate; a first plasma generating chamber provided in the processing chamber; first reactive gas supply means for supplying a first reactive gas into the first plasma generating chamber; a pair of first discharge electrodes which generates plasma in the first plasma generating chamber and generates an active species of the first reactive gas by exciting the first reactive gas; a first gas port which is provided on a sidewall of the first plasma generating chamber and jets the active specifies of the first reactive gas to the substrate; a second plasma generating chamber provided in the processing chamber; second reactive gas supply means for supplying a second reactive gas into the second plasma generating chamber; a pair of second discharge electrodes which generates plasma in the second plasma generating chamber and generates an active species of the second reactive gas by exciting the second reactive gas; and a second gas port which is provided on a sidewall of the second plasma generating chamber and jets the active specifies of the second reactive gas to the substrate.</p> |
