| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing variation in on-resistance of an NMOS transistor for bypassing a voltage of a battery provided to each of a plurality of batteries connected in series. <P>SOLUTION: A gate voltage generation circuit 22 includes a constant current circuit 26 and a resistor 28 whose one end is connected to the constant current circuit 26 while the other end is connected to a source of an NMOS transistor 14. A gate voltage of constant voltage is generated by the voltage drop of the resistor 28 to which a constant current outputted from the constant current circuit 26 is supplied. If a control circuit 24 turns on the NMOS transistor 14, a connection destination of the gate of the NMOS transistor 14 is switched so that the gate voltage generated by the gate voltage generation circuit 22 is applied to the gate of the NMOS transistor 14. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
