| 摘要 |
<p>Determining a surface contamination of polycrystalline silicon comprises: (a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; (b) immediately determining the impurities in the first two bars after deposition; (c) passing the second rod through one or more systems in which the polycrystalline silicon rods are processed into rod pieces or polysilicon fragments, optionally purifying, storing or packing; and (d) subsequently determining the impurities in the second bar. Determining a surface contamination of polycrystalline silicon comprises: (a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; (b) immediately determining the impurities in the first two bars after deposition; (c) passing the second rod through one or more systems in which the polycrystalline silicon rods are processed into rod pieces or polysilicon fragments, optionally purifying, storing or packing; and (d) subsequently determining the impurities in the second bar, where the surface contamination of the polycrystalline silicon is determined by the difference of the certain impurities in first and second rod due to plants and plant environment.</p> |
