发明名称 |
FREE LAYER WITH HIGH THERMAL STABILITY FOR MAGNETIC DEVICE APPLICATIONS BY INSERTION OF A BORON DUSTING LAYER |
摘要 |
A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. |
申请公布号 |
EP2839501(A4) |
申请公布日期 |
2015.11.25 |
申请号 |
EP20130777528 |
申请日期 |
2013.04.17 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
WANG, YU-JEN;KULA, WITOLD;TONG, RU-YING;JAN, GUENOLE |
分类号 |
H01L43/08;H01F10/32;H01L43/10;H01L43/12 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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