发明名称 Compliant dielectric layer for semiconductor device
摘要 Systems, apparatuses, and methods provided for semiconductor devices and integrated circuit (IC) packages that include compliant dielectric layers. In a through silicon via interposer or substrate (108), a compliant dielectric material (112) may be added to a surface of silicon material body to form a compliant dielectric layer. The compliant dielectric layer provides a thermal buffer and a stress buffer for a resulting IC package. The compliant dielectric material may be selected such that the coefficient of thermal expansion of the compliant dielectric material approximately matches the coefficient of thermal expansion of the circuit board on which the IC package is mounted. The compliant dielectric material may be selected such that it has a deformability that is greater than the silicon material body. Multiple sub-layers of compliant dielectric material may be used.
申请公布号 EP2887393(A3) 申请公布日期 2015.11.25
申请号 EP20140004185 申请日期 2014.12.11
申请人 BROADCOM CORPORATION 发明人 KHAN, REZAUR RAHMAN;ZHAO, SAM
分类号 H01L23/48;H01L21/768;H01L23/498 主分类号 H01L23/48
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