ｐ型ＺｎＯの作製方法、ＺｎＯエレクトロルミネッセンス半導体素子,申请号JP20120008332-传众专利搜索

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发明名称	ｐ型ＺｎＯの作製方法、ＺｎＯエレクトロルミネッセンス半導体素子
摘要
申请公布号	JP5823304(B2)	申请公布日期	2015.11.25
申请号	JP20120008332	申请日期	2012.01.18
申请人		发明人
分类号	H05B33/18;H05B33/10;H05B33/14	主分类号	H05B33/18
代理机构		代理人
主权项
地址

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