| 摘要 |
The present invention relates to a plasma processing method, capable of processing plasma on a film, formed on a substrate (W), by converting processing gas into plasma in a plasma generation area through supplying the processing gas into the plasma processing area. The distribution of in-plane throughput is obtained by the plasma processing of the film, formed on the substrate. Based on the distribution of the in-plane throughput, the velocity of the processing gas is controlled so that the velocity of the processing gas, supplied to an area in which the throughput of the plasma processing increases, relatively increases, or the velocity of the processing gas, supplied to an area in which the throughput of the plasma processing decreases, relatively decreases. The processing gas with the controlled velocity is supplied to the plasma processing area, and therefore, the plasma processing is performed on the film, formed on the substrate. |
