| 摘要 |
Provided is a semiconductor device capable of extending a noise margin. For example, each memory cell MC is connected to a word line WLA for a first port and a word line WLB for a second port; each word line is arranged in the order of WLA0, WLB0, WLB1, WLA1, WLA2, etc. in a memory area where a plurality of memory cells MCs are arranged in a matrix shape. A d2, a pitch between WLA-WLA and WLB-WLB, is smaller than a d1, a pitch between WLA-WLB. A word line of the same port is arranged on one side between both sides with respect to a random word line at the pitch of d2; and a word line of a different port is arranged on the other side at the pitch of d1. Therefore, the noise margin can be extended due to reduced interference between different ports in a small area, in comparison with the case of alternately arranging the WLA and the WLB. |
