发明名称 |
Carbon implant for workfunction adjustment in replacement gate transistor |
摘要 |
<p>A method includes providing a wafer that has a semiconductor layer having an insulator layer disposed on the semiconductor layer. The insulator layer has openings made therein to expose a surface of the semiconductor layer, where each opening corresponds to a location of what will become a transistor channel in the semiconductor layer disposed beneath a gate stack. The method further includes depositing a high dielectric constant gate insulator layer so as to cover the exposed surface of the semiconductor layer and sidewalls of the insulator layer; depositing a gate metal layer that overlies the high dielectric constant gate insulator layer; and implanting Carbon through the gate metal layer and the underlying high dielectric constant gate insulator layer so as to form in an upper portion of the semiconductor layer a Carbon-implanted region having a concentration of Carbon selected to establish a voltage threshold of the transistor.</p> |
申请公布号 |
GB2495574(B) |
申请公布日期 |
2015.11.25 |
申请号 |
GB20120012471 |
申请日期 |
2012.07.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DECHAO GUO;KEITH KWONG HON WONG;SHU-JEN HAN;JUN YUAN |
分类号 |
H01L29/10;H01L21/265;H01L21/8238 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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