Method of Producing a III-V Fin Structure

摘要

A method of producing a III-V fin structure within a gap of a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, wherein the method further comprises coating said at least two identical STI structures with a diffusion barrier at least on each side wall and wherein said semiconductor substrate is a Si substrate.