发明名称 Apparatus having integrated circuits made of TFT devices, and methods of manufacture thereof
摘要 <p>A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.</p>
申请公布号 EP2264745(B1) 申请公布日期 2015.11.25
申请号 EP20100010091 申请日期 1999.10.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KASAHARA, KENJI
分类号 H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/66;H01L29/786 主分类号 H01L21/336
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