发明名称 |
EXPOSURE PHOTOLITHOGRAPHY METHODS USING PHOTORESIST COMPOSITIONS |
摘要 |
<p>A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.</p> |
申请公布号 |
EP2240828(B1) |
申请公布日期 |
2015.11.25 |
申请号 |
EP20080869857 |
申请日期 |
2008.12.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUANG, WU-SONG;LIU, SEN;CHEN, KUANG-JUNG;KWONG, RANEE WAI-LING |
分类号 |
G03F7/004;G03F7/038;G03F7/039;G03F7/095;G03F7/20;G03F7/30;G03F7/38 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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