| 发明名称 | Semiconductor memory apparatus and operation method using the same | ||
| 摘要 | A semiconductor memory apparatus includes a command processing block configured to generate a voltage generation start signal, a first write control signal, a second write control signal, a read signal, and an operation signal in response to a first control signal and a second control signal in a write operation, and a memory control block configured to electrically couple a memory block, which stores data, to a sense amplifier or apply a predetermined voltage to the memory block in response to the voltage generation start signal, the first write control signal, the second write control signal, the read signal, and the operation signal. | ||
| 申请公布号 | US9196328(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201314022759 | 申请日期 | 2013.09.10 |
| 申请人 | SK Hynix Inc. | 发明人 | Yoon Jung Hyuk |
| 分类号 | G11C7/10;G11C7/22;G11C13/00 | 主分类号 | G11C7/10 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory apparatus comprising: a command processing block configured to generate a voltage generation start signal, a first write control signal, a second write control signal, a read signal, and an operation signal in response to a first control signal and a second control signal in a write operation; and a memory control block configured to electrically couple a memory block, which stores data, to a sense amplifier or apply a predetermined voltage to the memory block in response to the voltage generation start signal, the first write control signal, the second write control signal, the read signal, and the operation signal. | ||
| 地址 | Gyeonggi-do KR | ||