ESD protection circuit

摘要

A device having a substrate defined with a device region is presented. The device region includes an ESD protection circuit having a transistor. The transistor includes a gate having first and second sides, a first diffusion region disposed adjacent to the first side of the gate and a second diffusion region displaced away from the second side of the gate. The device includes a first device well encompasses the device region and a second device well disposed within the first device well. The second device well encompasses the first diffusion region and at least a part of the gate. The device also includes a third well which is disposed within the second device well and a drain well which encompasses the second diffusion region and extends below the gate.

主权项

1. A device comprising:
a substrate defined with a device region, the device region comprises an ESD protection circuit having a transistor, wherein the transistor is devoid of a drift well, the transistor includes
a gate having first and second sides,a first diffusion region adjacent to the first side of the gate, anda second diffusion region displaced away from the second side of the gate, wherein the first and second diffusion regions comprise dopants of a first polarity type; a first device well encompasses the device region and a second device well disposed within the first device well, wherein the second device well encompasses the first diffusion region and at least a part of the gate without encompassing the second diffusion region; a third well disposed within the second device well; and a drain well encompasses the second diffusion region and extends below the gate.