发明名称 Through substrate features in semiconductor substrates
摘要 Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.
申请公布号 US9196670(B2) 申请公布日期 2015.11.24
申请号 US201414180188 申请日期 2014.02.13
申请人 Infineon Technologies AG 发明人 Mackh Gunther;Siedel Uwe;Leuschner Rainer
分类号 H01L27/08;H01L49/02;H01L21/768;H01L23/48;H01L23/522;H01L23/64;H01L25/065 主分类号 H01L27/08
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor device comprising: a through substrate via disposed in a first region of a semiconductor substrate; a through substrate conductor coil disposed in a second region of the semiconductor substrate; an insulating liner disposed on sidewall of the through substrate via; and a sidewall insulating liner disposed on the sidewall of the semiconductor device, the sidewall insulating liner covering a sidewall of the semiconductor substrate, wherein the insulating liner and the sidewall insulating liner comprise the same material.
地址 Neubiberg DE