发明名称 |
Through substrate features in semiconductor substrates |
摘要 |
Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate. |
申请公布号 |
US9196670(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201414180188 |
申请日期 |
2014.02.13 |
申请人 |
Infineon Technologies AG |
发明人 |
Mackh Gunther;Siedel Uwe;Leuschner Rainer |
分类号 |
H01L27/08;H01L49/02;H01L21/768;H01L23/48;H01L23/522;H01L23/64;H01L25/065 |
主分类号 |
H01L27/08 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A semiconductor device comprising:
a through substrate via disposed in a first region of a semiconductor substrate; a through substrate conductor coil disposed in a second region of the semiconductor substrate; an insulating liner disposed on sidewall of the through substrate via; and a sidewall insulating liner disposed on the sidewall of the semiconductor device, the sidewall insulating liner covering a sidewall of the semiconductor substrate, wherein the insulating liner and the sidewall insulating liner comprise the same material. |
地址 |
Neubiberg DE |