Bonding transistor wafer to LED wafer to form active LED modules

摘要

LED modules are disclosed having a control MOSFET, or other transistor, in series with an LED. In one embodiment, a MOSFET wafer, containing an array of vertical MOSFETS, is aligned and bonded to an LED wafer, containing a corresponding array of vertical LEDs, and singulated to form thousands of active 3-terminal LED modules with the same footprint as a single LED. Despite the different forward voltages of red, green, and blue LEDs, RGB modules may be connected in parallel and their control voltages staggered at 60 Hz or greater to generate a single perceived color, such as white. The RGB modules may be connected in a panel for general illumination or for a color display.

主权项

1. An integrated driver and light emitting diode (LED module comprising:
a vertical light emitting diode (LED) having a top LED conducting surface and a bottom LED conducting surface, the LED comprising at least an n-type epitaxial layer and a p-type epitaxial layer; and a vertical transistor in series with the LED, the transistor and the LED having been formed separately and independently prior to being connected in series, the vertical transistor comprising at least an n-type silicon area and a p-type silicon area, the transistor having a first terminal, a second terminal, and a third terminal, the first terminal being a bottom conducting surface of the transistor, the bottom conducting surface of the transistor being electrically and mechanically bonded to the top LED conducting surface, the LED and transistor being substantially the same size, the LED being configured to emit light when a first voltage is applied to the bottom LED conducting surface, a second voltage is applied to the second terminal, and a first control voltage is applied to the third terminal.