Methods of using a trench salicide routing layer

摘要

Methodology enabling selectively connecting fin structures using a segmented trench salicide layer, and the resulting device are disclosed. Embodiments include: providing on a substrate at least one gate structure; providing first and second fin structures in a vertical direction intersecting with the at least one gate structure; and providing a first segment of a salicide layer, the first segment being formed along a horizontal direction and being connected with the second fin structure and separated from the first fin structure.

主权项

1. A method comprising:
providing on a substrate at least one gate structure; providing first and second fin structures in a vertical direction intersecting with the at least one gate structure; providing first, second, and third sets of segments of a salicide layer, each of the first, second, and third sets having different vertical positions, separated from each other by a gate structure of the at least one gate structure, wherein the second set separates the first and third sets, and each of the sets of segments comprises segments having a length extending along a horizontal direction perpendicular to the vertical direction; providing a first segment in the first set of segments of the salicide layer, the first segment being connected with the second fin structure and separated from the first fin structure; and providing a second segment in the second set of segments of the salicide layer, the second segment selectively connecting with the first fin structure and separating from the second fin structure, wherein positions of the segments of the salicide layer determine selection between a 1-1-2 type of static random access memory (SRAM) configuration and a 1-2-2 type of SRAM configuration.