| 发明名称 |
Metal gate transistor |
| 摘要 |
A metal gate transistor is disclosed. The metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate. The metal gate further includes a high-k dielectric layer, a bottom barrier metal (BBM) layer on the high-k dielectric layer, a first work function layer on the BBM layer, a second work function layer between the BBM layer and the first work function layer, and a low resistance metal layer on the first work function layer. Preferably, the first work function layer includes a p-type work function layer and the second work function layer includes a n-type work function layer. |
| 申请公布号 |
US9196546(B2) |
申请公布日期 |
2015.11.24 |
| 申请号 |
US201314025833 |
申请日期 |
2013.09.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tzou Shih-Fang;Lai Chien-Ming;Chen Yi-Wen;Wu Hung-Yi;Huang Tong-Jyun;Lin Chien-Ting;Lin Chun-Hsien |
| 分类号 |
H01L29/76;H01L21/8238 |
主分类号 |
H01L29/76 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A metal gate transistor, comprising:
a substrate; a metal gate on the substrate, wherein the metal gate comprises:
a high-k dielectric layer;a bottom barrier metal (BBM) layer on the high-k dielectric layer, wherein the BBM layer comprises TiSiN;a first work function layer on the BBM layer;a second work function layer between the BBM layer and the first work function layer, wherein the first work function layer comprises a p-type work function layer and the second work function layer comprises a n-type work function layer; anda low resistance metal layer on the first work function metal layer; a source/drain region in the substrate adjacent to the metal gate. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
