| 摘要 |
PROBLEM TO BE SOLVED: To prevent a damaged part from being formed at an end of a semiconductor substrate when forming a recess for a through electrode on the semiconductor substrate.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a first insulation layer on a part of a first surface of a semiconductor substrate; a process of forming a first protection film on the first surface of the semiconductor substrate; a process of forming a second protection film on the first protection film; a process of forming a through hole in the first insulation layer so as to expose the semiconductor substrate while leaving the first protection film and the second protection film which are laminated at least on an end of the first surface of the semiconductor substrate; and a process of forming on the semiconductor substrate, a recess which connects the through hole at least partially while leaving the first protection film at least on an end of the first surface of the semiconductor substrate. |
