发明名称 Organic devices, organic electroluminescent devices, organic solar cells, organic FET structures and production method of organic devices
摘要 An organic device has a hole current-electron current conversion layer which comprises a laminate of an electron transportation section and a hole transportation section. The electron transportation section includes a charge transfer complex formed upon an oxidation-reduction reaction between a reduced low work function metal and an electron-accepting organic compound, the reduced metal being produced upon an in-situ thermal reduction reaction caused upon contact, through lamination or mixing by co-deposition, of an organic metal complex compound or an inorganic compound containing at least one metal ion selected from ions of low work function metals having a work function of not more than 4.0 eV, and a thermally reducible metal capable of reducing a metal ion contained in the organic metal complex compound or the inorganic compound in vacuum to the corresponding metal state, and the electron transportation section having the electron-accepting organic compound in the state of radical anions. The hole transportation section includes an organic compound having an ionization potential of less than 5.7 eV and an electron-donating property and an inorganic or organic substance capable of forming a charge transfer complex upon its oxidation-reduction reaction with the organic compound, the organic compound and the inorganic or organic substance being contacted through lamination or mixing, and the electron-donating organic compound is in the state of radical cations.
申请公布号 US9196850(B2) 申请公布日期 2015.11.24
申请号 US200410983857 申请日期 2004.11.08
申请人 ROHM Co., Ltd.;Mitsubishi Heavy Industries, Ltd. 发明人 Matsumoto Toshio;Yokoi Akira;Nakada Takeshi;Kawamura Norifumi;Kido Junji
分类号 H01L51/54;H01L51/42;H01L51/50;H01L51/52;H01L51/00 主分类号 H01L51/54
代理机构 McCormick, Paulding & Huber LLP 代理人 McCormick, Paulding & Huber LLP
主权项 1. An organic device comprising in order: a glass substrate; an anode; a hole transportation layer; a light emission layer; a layer including Alq and Liq with a molar ratio of 1:1; a thermally reducible metal layer of aluminum; a hole current-electron current conversion layer including an electron transportation section and a hole transportation section in contact with each other; and a cathode, wherein said hole current-electron current conversion layer functions as a buffer layer against a high energy particle deposition when said cathode is being formed, wherein said hole transportation section consists of NPD and vanadium pentoxide, and wherein said hole transportation section is transparent to light and is in contact with the cathode, and wherein the amount of aluminum in the thermally reducible metal layer is the amount needed to reduce all the lithium ions in the Liq of the Liq/Alq layer to lithium metal, such that the thermally reducible metal layer consists of aluminum ions.
地址 Yonezawa, Yamagata-Ken JP