Magnetoresistive effect element

摘要

A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

主权项

1. A magnetoresistive effect element comprising:
a first ferromagnetic layer having a variable magnetization direction; a second ferromagnetic layer having an invariable magnetization direction; and a tunnel barrier layer formed between the first ferromagnetic layer and the second ferromagnetic layer, wherein an energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer, and wherein the second ferromagnetic layer contains a main component and an additive element, the main component contains at least one of Fe, Co, and Ni, and the additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W, wherein the first ferromagnetic layer contains the additive element, and wherein an amount of the additive element contained in the second ferromagnetic layer is larger than that of the additive element contained in the first ferromagnetic layer.