Flash memory structure and method for forming the same

摘要

Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device further includes an insulating layer formed on a sidewall of the control gate and a memory gate formed adjacent to the insulating layer. In addition, the insulating layer has a first height, and the memory gate has a second height shorter than the first height.

主权项

1. A semiconductor device structure, comprising:
a substrate; a control gate formed over the substrate, wherein the control gate comprises a first silicide layer; an insulating layer formed on a sidewall of the control gate; and a memory gate formed adjacent to the insulating layer, wherein the memory gate comprises a second silicide layer; wherein the insulating layer has a first height, and the memory gate has a second height shorter than the first height, and wherein a distance between a bottom surface of the first silicide layer and a top surface of the second silicide layer is in a range from about 10 nm to about 200 nm.