发明名称 |
Gate driving circuit and display device having the same |
摘要 |
A gate driving circuit includes: a plurality of driving stages configured to apply gate signals to a plurality of pixels of a display panel, one driving stage of the driving stages including: a thin film transistor including a first control electrode, an active part overlapping the first control electrode, an input electrode overlapping the active part, an output electrode overlapping the active part, and a second control electrode on the first control electrode and the active part; and a control voltage generator configured to supply a control voltage determined according to a channel characteristic of the thin film transistor to the second control electrode and to include a voltage generating thin film transistor including an active part having a same channel characteristic as the active part of the thin film transistor. |
申请公布号 |
US9196213(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201414578080 |
申请日期 |
2014.12.19 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim CheolKyu;Jeon Sanghyun;Oh Jihoon |
分类号 |
H03K17/687;G09G3/36;G09G5/00;H03K17/16 |
主分类号 |
H03K17/687 |
代理机构 |
Christie, Parker & Hale, LLP |
代理人 |
Christie, Parker & Hale, LLP |
主权项 |
1. A gate driving circuit comprising:
a plurality of driving stages configured to apply gate signals to a plurality of pixels of a display panel, one driving stage of the driving stages comprising: a thin film transistor including a first control electrode, an active part overlapping the first control electrode, an input electrode overlapping the active part, an output electrode overlapping the active part, and a second control electrode on the first control electrode and the active part; and a control voltage generator configured to supply a control voltage determined according to a channel characteristic of the thin film transistor to the second control electrode and to include a voltage generating thin film transistor including an active part having a same channel characteristic as the active part of the thin film transistor. |
地址 |
Yongin-si KR |