Semiconductor structure and electrostatic discharge protection circuit

摘要

A semiconductor structure and an electrostatic discharge protection circuit are disclosed. The semiconductor structure includes a device structure comprising a first well region, a second well region, a source, a drain, an extending doped region, and a gate structure. The second well region has conductivity type opposite to a conductivity type of the first well region. The drain has a conductivity type same as a conductivity type of the source. The source and the drain are formed in the first well region and the second well region respectively. The extending doped region is adjoined with drain and extended under the drain. The extending doped region has a conductivity type same as the conductivity type of the drain. The gate structure is on the first well region.

主权项

1. A semiconductor structure, comprising:
a first device structure comprising:
a first well region;a second well region having a conductivity type opposite to a conductivity type of the first well region;a first source;a first drain having a conductivity type same as a conductivity type of the first source, the first source and the first drain being formed in the first well region and the second well region respectively;an extending doped region adjoined with the first drain and extended under the first drain, the extending doped region having a conductivity type same as the conductivity type of the first drain; anda first gate structure on the first well region; a second device structure comprising:
a second source formed in the in the first well region and having a conductivity type opposite to the conductivity type of the first well region;a second drain formed in the first well region and having a conductivity type opposite to the conductivity type of the first well region; anda second gate structure formed on the first well region; and a diode opposing two electrodes of which are coupled to the first source and the second gate structure respectively.