Semiconductor substrate and method for manufacturing semiconductor substrate

摘要

Disclosed herein is a substrate including: a base substrate; an insulating layer formed on an upper portion of the base substrate; a circuit layer formed in a form in which it is buried in the insulating layer; at least one electrode formed on upper portions of the circuit layer and the insulating layer and having a prominence and depression formed at a side thereof; and a dielectric layer formed in a form in which it surrounds the side of the electrode.

主权项

1. A substrate comprising:
a base substrate; an insulating layer formed on an upper portion of the base substrate; a circuit layer formed in a form in which it is buried in the insulating layer; at least one electrode formed on upper portions of the circuit layer and the insulating layer and having a protrusion part or a groove part, or a combination thereof formed at a side thereof; and a dielectric layer formed in a form in which it surrounds the side of the electrode, wherein the protrusion part and the groove part are a dummy member to increase a bonding area between the electrode and the dielectric layer, and are not electrically interconnected with any conductor members.