| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | In one embodiment, a semiconductor device includes a semiconductor substrate, isolation regions disposed in the semiconductor substrate, and device regions disposed between the isolation regions in the semiconductor substrate. The device further includes a first line disposed on the device regions and the isolation regions, a line width of the first line on the isolation regions being larger than a line width of the first line on the device regions. | ||
| 申请公布号 | US9196494(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201213590311 | 申请日期 | 2012.08.21 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Arai Shinya |
| 分类号 | H01L21/8239;H01L27/108;H01L21/28;H01L27/115;H01L21/762 | 主分类号 | H01L21/8239 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate; isolation regions disposed in the semiconductor substrate; device regions disposed between the isolation regions in the semiconductor substrate; a first line disposed in a memory cell array part on the semiconductor substrate, and disposed on the device regions and the isolation regions, a line width of the first line on the isolation regions being larger than a line width of the first line on the device regions; and a second line disposed in a peripheral circuit part on the semiconductor substrate, and disposed on the device regions and the isolation regions, a line width of the second line on the isolation regions being smaller than a line width of the first line on the device regions. | ||
| 地址 | Tokyo JP | ||