Memory resistor adjustment using feedback control

摘要

Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.

主权项

1. An apparatus, comprising:
a memristor characterized by a non-volatile electrical resistance; a feedback controller configured to adjust the non-volatile electrical resistance to one or more particular values between a first limiting value and a second limiting value, the feedback controller electrically coupled to the memristor in a closed-loop control arrangement at least during the adjustment of the non-volatile electrical resistance; wherein the feedback controller is further configured to monitor an instantaneous electrical resistance of the memristor during adjustment of the non-volatile electrical resistance to either the first or second limiting value and to stop the adjustment based on the instantaneous electrical resistance reaching a desired resistance at either said first or second limiting value; the feedback controller further configured to adjust the non-volatile electrical resistance of the memristor by way of proportional-integral-derivative control.