| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element and a manufacturing method of the same, which can promote adequate growth from a c-plane of a sapphire substrate to achieve stable and good quality crystallinity by more successfully inhibiting crystal growth of a GaN-based nitride semiconductor from an inclined plane of a salient on the sapphire substrate.SOLUTION: A nitride semiconductor element manufacturing method comprises: a first etching step of dry etching a sapphire substrate by providing a mask on a surface of the sapphire substrate on a c-plane side to form a plurality of salients each having a circular bottom face; a second etching step of wet etching the sapphire substrate where the salients are formed to form the salients each having a triangular pyramid tip while maintaining the bottom face of the salient in a circular shape; and a semiconductor layer growth step of growing a semiconductor layer on the surface of the sapphire substrate on the side where the salients are formed. |
