| 摘要 |
PROBLEM TO BE SOLVED: To form a heterojunction bipolar transistor (HBT) on a substrate of a different kind having a high heat dissipation property without imposing any restriction.SOLUTION: A method for manufacturing a heterojunction bipolar transistor comprises the steps of: forming a first layer structure on a first substrate 101 made of InP; forming a second layer structure on a second substrate 201; putting the first and second layer structures on each other; removing the first substrate and a buffer layer 103; patterning emitter contact cap layers 104 and 105, a collector layer 108, a base layer 107 and an emitter layer 106; and providing electrodes 303, 302 and 301 on the emitter contact cap layer, the base layer and the collector layer, respectively. The buffer layer is smaller than InP in lattice constant, and includes Al and/or Ga, and P. The second substrate is made of SiC, AlN, Si or C. The first emitter contact cap layer is larger than InP in lattice constant, and includes at least In. |
