| 摘要 |
PROBLEM TO BE SOLVED: To disclose an art capable of inhibiting the occurrence of variation in manufactured semiconductor devices when the semiconductor device is manufactured by performing ion implantation on a semiconductor substrate after etching to form a diffusion layer.SOLUTION: A semiconductor device 2 has a semiconductor substrate 10. In the semiconductor substrate 10, an emitter region 12, a top body region 14, a barrier region 16, a bottom body region 18, a drift region 20, a collector region 22, a trench 30, a gate insulation film 32 and a gate electrode 34 are formed. A surface of the gate electrode 34 is provided at a position deeper than a surface of the semiconductor substrate 10. A surface of a first part 34a of the gate electrode 34 at the center of a width direction of the trench 30 is provided at a position shallower than a surface of a second part 34b of the gate electrode 34, which contacts the gate insulation film 32. |
