| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can prevent a damage of an insulation film located below a gate pad electrode.SOLUTION: A silicon carbide semiconductor device 100 comprises an n-type impurity region 40 which is formed on a surface of a p-type impurity region 20 located below a gate pad electrode 30, that is, just below an insulation film and electrically connected to a source electrode 28. Even when the p-type impurity region 20 is depleted due to rapid rise of drain voltage caused by a switch-off operation of a vertical MOSFET 101, the n-type impurity region 40 is not depleted and kept at source potential of the vertical MOSFET 101. As a result, dynamic punch-through where a region just below the insulation film instantaneously reaches high potential is inhibited to reduce electric field applied to the insulation film. |
