| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability of which variation in reverse breakdown voltage is small when compared with a conventional semiconductor device. <P>SOLUTION: The semiconductor device 100 includes an n<SP POS="POST">-</SP>type semiconductor layer (first semiconductor layer) 114 and a p<SP POS="POST">+</SP>type semiconductor layer (second semiconductor layer) 120 which is in a region surrounded by a plurality of straight parts 122 and a plurality of corner parts 124, on a surface of the n<SP POS="POST">-</SP>type semiconductor layer 114, and pn junction is formed between the n<SP POS="POST">-</SP>type semiconductor layer 114 and the p<SP POS="POST">+</SP>type semiconductor layer 120. Here, a portion of the pn junction which is exposed from the surface of the n<SP POS="POST">-</SP>type semiconductor layer 114 is assumed to be a pn junction exposure part. In the semiconductor device, a groove 130 is formed which has a structure lacking "a predetermined portion containing the pn junction exposure part and having a depth exceeding the depth of a bottom surface 126 of the p<SP POS="POST">+</SP>type semiconductor layer 120" at all corner parts of a plurality of corner parts 124. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
