发明名称 半導体装置の製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a technique of forming a wiring groove in an insulating film while keeping the shapes of the bottom face and the side face excellently. <P>SOLUTION: A temporary pattern is formed on a substrate. An interlayer insulating film is formed on the substrate to surround the temporary pattern. Following to formation of the interlayer insulating film, the temporary pattern is removed. A first barrier film and a seed film are formed on the side face and the bottom face of a recess which appeared by removing the temporary pattern. The recess is filled with a wiring material by depositing the wiring material on the seed film. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5821357(B2) 申请公布日期 2015.11.24
申请号 JP20110157804 申请日期 2011.07.19
申请人 发明人
分类号 H01L23/12;H01L21/3205;H01L21/768;H01L23/532 主分类号 H01L23/12
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