Nonvolatile memory device using variable resistance material and method for driving the same

摘要

The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts. In response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts.

主权项

1. A nonvolatile memory device comprising:
a resistance memory cell; a first sensing node; a first clamping unit connected between the resistance memory cell and the first sensing node to provide a first clamping bias to the resistance memory cell, wherein the first clamping bias increases over time; a first compensation unit providing a compensation current to the first sensing node; and a first sense amplifier connected to the first sensing node to sense a level change of the first sensing node, wherein in response to first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts, and wherein in response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts, and an enable signal generation unit that generates an enable signal, wherein the enable signal generation unit includes: a reference resistor; a second sensing node; a second clamping unit connected between the reference resistor and the second sensing node to provide a second clamping bias to the reference resistor; a second compensation unit providing second compensation current to the second sensing node; and a second sense amplifier connected to the second sensing node to sense a level change of the second sensing node, wherein during the read period, the second clamping bias is changed over time.